BDY26 查看數據表（PDF） - Comset Semiconductors

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BDY26

NPN SILICON TRANSISTORS, DIFFUSED MESA

Comset Semiconductors 

COMSET

SEMICONDUCTORS

BDY26, 183 T2

BDY27, 184 T2

BDY28, 185 T2

VCE(SAT)

V(BR)CBO

VBE(SAT)

h21E

fT

td + tr

ts + tf

Collector-Emitter saturation

BDY26, 183T2 -

Voltage (*)

IC=2.0 A, IB=0.25 A BDY27, 184T2 -

-

- 0.6 V

BDY28, 185T2 - -

Collector-Base Breakdown

Voltage (*)

IC=3 mA

BDY26, 183T2 300 - -

BDY27, 184T2 400 -

-

V

BDY28, 185T2 500 -

-

BDY26, 183T2 - -

Base-Emitter Voltage (*)

IC=2.0 A, IB=0.25 A BDY27, 184T2 -

BDY28, 185T2 -

- 1.2 V

-

Static Forward Current

transfer ratio (*)

VCE=4 V, IC=1 A

VCE=4 V, IC=2 A

A

- 55 -

B

- 65 -

C

A

- 90 -

15 20 45

-

B

30 45 90

C

75 82 180

Transition Frequency

BDY26, 183T2

VCE=15 V, IC=0.5 A,

f=10 MHz

BDY27, 184T2

10

-

BDY28, 185T2

- MHz

Turn-on time

IC=5 A,

IB=1 A

BDY26, 183T2

BDY27, 184T2 - - 1 µs

BDY28, 185T2

Turn-off time

IC=5 A,

IB1=1 A,

IB2=-1 A

A

2

B

- - 3.5 µs

C

6

(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

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