3S1265RF 查看數據表（PDF） - Fairchild Semiconductor

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3S1265RF

Fairchild Power Switch(FPS)

Fairchild Semiconductor 

KA3S1265R/KA3S1265RF/KA3S1265RD

Electrical Characteristics (SFET part)

(Ta = 25°C unless otherwise specified)

Characteristic

Drain-source breakdown voltage

Zero gate voltage drain current

Static drain-source on resistance (note)

Forward transconductance (note)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn on delay time

Rise time

Turn off delay time

Fall time

Total gate charge

(gate-source+gate-drain)

Gate-source charge

Gate-drain (Miller) charge

Symbol

BVDSS

IDSS

RDS(ON)

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

Test condition

VGS=0V, ID=50µA

VDS=Max., Rating,

VGS=0V

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

VGS=10V, ID=6.0A

VDS=50V, ID=6.0A

VGS=0V, VDS=25V,

f=1MHz

VDD=0.5BVDSS, ID=12.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

VGS=10V, ID=12.0A,

VDS=0.5BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

Min. Typ. Max. Unit

650 -

-

V

-

-

50 µA

-

- 200 mA

- 0.72 -

W

5.7

-

-

S

- 2700 -

-

300 -

pF

-

61

-

-

18

-

-

37

-

nS

-

88

-

-

36

-

-

- 140

-

20

-

nC

-

69

-

Note:

Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

S = -1--

R

3

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