MRY1518B 查看數據表（PDF） - AnaSem Semiconductors

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MRY1518B

1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch

AnaSem Semiconductors 

Rev. E13-01

1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch

MRY1518B Series

MAGNETIC FLUX DENSITY AND OUTPUT VOLTAGE LEVEL

Conditions

Magnet & Power

Magnet = OFF / Power = ON

Magnet = ON / Power = ON

Magnet = OFF / Power = ON

Magnet flux density

M = 0mT

M ≧ 2.2mT

M ≦ 0.8mT

Output level

High-level

Low-level

High-level

DETECTION PULSE DRIVING CYCLE (SAMPLING CYCLE)

IDD

IDD ON (Typ. 1.8mA)

Period (Typ. 1.3mS)

Awake (10µS)

Sleep (Output latched)

(VDD=1.8V)

IDD AVG (Typ. 21µA)

IDD OFF (Typ. 1.3µA)

OUTPUT SWITCHING TIMING CHART

On

Sampling

pulse

Off

Magnetic

flux

MOP

MRP

time

(Typ. 1.5mT)

(Typ. 1.2mT)

VOUT

H-level

L-level

Latch

Latch

Latch

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