MRY1518E 查看數據表（PDF） - AnaSem Semiconductors

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MRY1518E

12.5msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch

AnaSem Semiconductors 

12.5msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch

Rev. E13-01

MRY1518E Series

Application example 2 -- [Slide type & Rotary type]

sition A

Magnet

MR sensor

4

VD

HD

Position B

Output level = Low → High

HD

Pos3

ion C

Output level = High

MR sensor

Magnet

Position A

Output level = High → Low

MR sensor

Position B

Output level = Low

MR sensor

Position C

Output level = Low → High

MR sensor

Position D

Output level = High

In the detection of the slide type, there are two ways of arrangement of magnetic field detecting

direction against moving direction. One is parallel and another is cross with moving direction.

In case of parallel positioning of magnetic field with moving direction [arrangement 1], the output of IC

might be L-level (ON-state) → H-level (OFF-state) → L-level (ON-state) → H-level (OFF-state) due to

reverse-magnetic field.

To prevent from this malfunction, it is recommended to arrange the detection direction of sensor and

magnetic field to be crossed with moving direction of cover [arrangement 2].

Moving

direction

Moving

di1

N or S

Magnetic field direction

S or N

Detection direction

Moving

direction

N or S

S or N

Moving

direction

Magnetic field direction

Detection direction

[Arrangement 1]

Parallel the direction of detection magnetic field

with the moving direction

[Arrangement 2]

Cross the direction of detection magnetic field

with the moving direction

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