FTP04N65 查看數據表（PDF） - InPower Semiconductor
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FTP04N65
InPower Semiconductor
FTP04N65 Datasheet PDF : 9 Pages
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OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
∆BVDSS/∆ TJ Coefficient, Figure 11.
650
--
--
0.71
Max.
--
--
--
--
25
IDSS
Drain-to-Source Leakage Current
--
--
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
--
--
100
--
--
-100
Units
V
V/ oC
µA
nA
Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=650V, VGS=0V
VDS=520V, VGS=0V
TJ=125 oC
VGS=+30 V
VGS= -30V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
1.8
Gate Threshold Voltage, Figure 12.
2.0
--
gfs
Forward Transconductance
--
3.8
Max.
2.2
4.0
--
Units
Ω
V
S
Test Conditions
VGS=10V, ID=2.4A
(NOTE *4)
VDS=VGS, ID=250µA
VDS=15V, ID=4.0A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Parameter
Min. Typ. Max. Units
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
--
660
--
--
85
--
pF
--
18
--
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
--
23
--
--
4.3
--
nC
Qgd
Gate-to-Drain (“Miller”) Charge
--
10.6
--
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
Figure 14
VDD=325V
ID=4.0A
VGS=10 V
Figure 15
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
--
21
--
--
21
--
ns
--
44
--
--
40
--
VDD=325V
ID=4.0A
VGS=10 V
RG=12 Ω
©2006 InPower Semiconductor Co., Ltd.
FTP04N65/FTA04N65 REV. A. April. 2006
Page 2 of 9
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