FTA04N65 查看數據表（PDF） - InPower Semiconductor

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FTA04N65

N-Channel MOSFET / Vdss = 650V, Id =4.0A / FTP04N65 TO-220, FTA04N65 TO-220F

InPower Semiconductor 

Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified

Symbol

Parameter

Min. Typ. Max. Units

IS

Continuous Source Current (Body Diode)

--

--

4.0

A

ISM

Maximum Pulsed Current (Body Diode)

--

--

16.0

A

VSD

Diode Forward Voltage

--

--

1.5

V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

--

250 380

ns

--

1.6

2.4

µC

Test Conditions

Integral pn-diode

in MOSFET

IS=4.0A, VGS=0V

VGS=0 V

IF=4.0A, di/dt=100 A/µs

Notes:

*1. TJ = +25 oC to +150 oC.

*2. Repetitive rating; pulse width limited by maximum junction temperature.

*3. ISD= 4.0A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.

*4. Pulse width < 380µs; duty cycle < 2%.

©2006 InPower Semiconductor Co., Ltd.

FTP04N65/FTA04N65 REV. A. April. 2006

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