Source-Drain Diode Characteristics Tc=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current (Body Diode)
--
--
4.0
A
ISM
Maximum Pulsed Current (Body Diode)
--
--
16.0
A
VSD
Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
--
250 380
ns
--
1.6
2.4
µC
Test Conditions
Integral pn-diode
in MOSFET
IS=4.0A, VGS=0V
VGS=0 V
IF=4.0A, di/dt=100 A/µs
Notes:
*1. TJ = +25 oC to +150 oC.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD= 4.0A di/dt < 100 A/µs, VDD < BVDSS, TJ=+150 oC.
*4. Pulse width < 380µs; duty cycle < 2%.
©2006 InPower Semiconductor Co., Ltd.
FTP04N65/FTA04N65 REV. A. April. 2006
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