Figure 6. Maximum Peak Current Capability
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0----–-----T---C---
125
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
12 PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
10 VDS = 10 V
8
6
4
+150 oC
2
+25 oC
-55 oC
0
2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5
VGS, Gate-to-Source Voltage (V)
100.0
Figure8. Unclamped Inductive
Switching Capability
10.0
STARTING TJ = 150 oC
1.0
STARTING TJ = 25 oC
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
If R≠ 0: tAV= (L/R) ln[IAS×R)/(1.3BVDSS-VDD)+1]
R equals total Series resistance of Drain circuit
0.1
1E-6
10E-6 100E-6 1E-3
10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 9. Typical Drain-to-Source ON
Resistance vs Drain Current
3.5
PULSE DURATION = 2 µs
DUTY CYCLE = 0.5% MAX
3.0 TC=25°C
2.5
2.0
VGS = 10V
VGS = 20V
1.5
1.0
0
2
4
6
8
10
12
ID, Drain Current (A)
©2006 InPower Semiconductor Co., Ltd.
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-75 -50 -25 0
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 4.0A
25 50 75 100 125 150
TJ, Junction Temperature (oC)
FTP04N65/FTA04N65 REV. A. April. 2006
Page 5 of 9