FTP04N65 查看數據表（PDF） - InPower Semiconductor

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FTP04N65

N-Channel MOSFET / Vdss = 650V, Id =4.0A / FTP04N65 TO-220, FTA04N65 TO-220F

InPower Semiconductor 

Figure 11. Typical Breakdown Voltage vs

Junction Temperature

1.15

1.10

1.05

1.00

0.95

0.90

VGS = 0V

ID = 250 µA

-75 -50 -25 0.0 25 50 75 100 125 150

TJ, Junction Temperature (oC)

Figure 13. Maximum Forward Bias Safe

Operating Area

100.0

TJ = MAX RATED, TC = 25 oC

Single Pulse

10.0

10µs

100µs

1.0

0.1

1

OPERATION IN THIS AREA MAY

BE LIMITED BY R

DS(ON)

1.0ms

10ms

DC

10

100

VDS, Drain-to-Source Voltage (V)

1000

Figure 15. Typical Gate Charge

vs Gate-to-Source Voltage

12

10

VDS = 163V

8

VDS = 325V

VDS = 488V

6

4

2

0

0

ID = 4.0A

5

10

15

20

25

QG , Total Gate Charge (nC)

©2006 InPower Semiconductor Co., Ltd.

Figure 12. Typical Threshold Voltage vs

Junction Temperature

1.2

1.1

1.0

0.9

0.8

VGS = VDS

ID = 250 µA

0.7

-75 -50 -25 0.0 25 50 75 100 125 150

TJ, Junction Temperature (oC)

Figure 14. Typical Capacitance vs

10000

1000

Ciss

100

Coss

10

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd

Coss ≅ Cds + Cgd

Crss = Cgd

1

0.1

1

10

Crss

100

VDS, Drain Voltage (V)

1000

Figure 16. Typical Body Diode Transfer

Characteristics

50

45

40

35

30

25

20

+150 oC

15

+25 oC

10

-55 oC

5

VGS = 0V

0

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD, Source-to-Drain Voltage (V)

FTP04N65/FTA04N65 REV. A. April. 2006

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