MTY30N50E 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MTY30N50E Datasheet PDF : 8 Pages
| |||
MTY30N50E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 500 Vdc, VGS = 0 Vdc)
(VDS = 500 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 15 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 30 Adc)
(ID = 15 Adc, TJ = 125°C)
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 250 Vdc, ID = 30 Adc,
VGS = 10 Vdc,
RG = 4.7 Ω)
Gate Charge
(See Figure 8)
(VDS = 400 Vdc, ID = 30 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 30 Adc, VGS = 0 Vdc)
(IS = 30 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 30 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min
Typ
Max
Unit
500
−
−
566
−
Vdc
−
mV/°C
µAdc
−
−
10
−
−
200
−
−
100
nAdc
2
−
4
Vdc
−
7
−
mV/°C
−
−
0.15
Ohm
Vdc
−
4.1
5
−
−
7
17
−
−
mhos
−
7200 10080
pF
−
775
1200
−
120
250
−
32
60
ns
−
105
175
−
160
275
−
115
200
−
235
350
nC
−
35
−
−
110
−
−
65
−
Vdc
−
0.95
1.2
−
0.88
−
−
485
−
ns
−
312
−
−
173
−
−
8.2
−
µC
−
4.5
−
nH
−
13
−
nH
http://onsemi.com
2
Share Link: 