MTY30N50E 查看數據表（PDF） - ON Semiconductor
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MTY30N50E Datasheet PDF : 8 Pages
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MTY30N50E
TYPICAL ELECTRICAL CHARACTERISTICS
60
TJ = 25°C
50
40
VGS = 10 V
6V
8V
30
5V
20
10
4V
0
0
2
4
6
8
10
12
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
60
VDS ≥ 10 V
50
40
30
20
100°C
TJ = −55°C
10
25°C
0
2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.35
0.3 VGS = 10 V
0.25
TJ = 100°C
0.2
0.15
25°C
0.1
−55 °C
0.05
0
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.17
TJ = 25°C
0.16
0.15
VGS = 10 V
0.14
15 V
0.13
0.12
0
10
20
30
40
50
60
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
VGS = 10 V
2
ID = 15 A
1.5
1
0.5
10000
1000
100 VGS = 0 V
10
TJ = 125°C
100°C
25°C
0
−50 −25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
100
200
300
400
500
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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