BSS84AKT 查看數據表（PDF） - NXP Semiconductors.
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BSS84AKT Datasheet PDF : 16 Pages
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NXP Semiconductors
BSS84AKT
50 V, 150 mA P-channel Trench MOSFET
-0.20
ID
(A)
-0.15
001aao128
(1) (2)
2.0
a
1.5
001aao129
-0.10
1.0
-0.05
0.5
(2)
(1)
0
0
-1
-2
-3
-4
VGS (V)
VDS > ID x RDSon
(1) Tj = 25 °C
(2) Tj = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
-3
VGS(th)
(V)
-2
001aao130
(1)
(2)
102
C
(pF)
(1)
(2)
10
001aao131
-1
(3)
(3)
0
-60
0
60
120
180
Tj (°C)
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
-10-1
-1
-10
-102
VDS (V)
f = 1 MHz, VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BSS84AKT
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
© NXP B.V. 2011. All rights reserved.
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