VN750S-E 查看數據表（PDF） - STMicroelectronics

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VN750S-E

High-side driver

STMicroelectronics 

VN750-E / VN750S-E / VN750PT-E / VN750B5-E

ELECTRICAL CHARACTERISTICS (continued)

Table 8. VCC - Output Diode

Symbol

Parameter

VF

Forward on Voltage

Test Conditions

-IOUT=1.3A; Tj=150°C

Min.

Typ.

Max. Unit

0.6

V

Table 9. Status Pin

Symbol

VSTAT

ILSTAT

CSTAT

VSCL

Parameter

Test Conditions

Status Low Output Voltage ISTAT=1.6mA

Status Leakage Current Normal Operation; VSTAT=5V

Status Pin Input

Capacitance

Normal Operation; VSTAT=5V

Status Clamp Voltage

ISTAT=1mA

ISTAT=-1mA

Min

Typ

Max Unit

(#)

0.5

V

(#)

10

µA

100

pF

6

6.8

8

V

-0.7

V

Table 10. Protections (see note 1)

Symbol

TTSD

TR

Thyst

tSDL

Parameter

Shut-down Temperature

Reset Temperature

Thermal Hysteresis

Status delay in overload

condition

Ilim Current limitation

Turn-off Output Clamp

Vdemag Voltage

Test Conditions

Tj>Tjsh

9V<VCC<36V

5V<VCC<36V

IOUT=2A; VIN=0V; L=6mH

Min

Typ

Max Unit

150

175

200

°C

135

°C

7

15

°C

20

µs

6

9

15

A

15

A

VCC-41 VCC-48 VCC-55 V

Note: 1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals must be

used together with a proper software strategy. If the device is subjected to abnormal conditions, this software must limit the duration

and number of activation cycles.

Table 11. Openload Detection

Symbol

IOL

tDOL(on)

VOL

tDOL(off)

Parameter

Openload ON State

Detection Threshold

Openload ON State

Detection Delay

Openload OFF State

Voltage Detection

Threshold

Openload Detection Delay

at Turn Off

VIN=5V

IOUT=0A

VIN=0V

Test Conditions

Note: (#) See relative diagram

Min

Typ

Max Unit

50

(#)

200 mA

200

µs

1.5

(#)

3.5

V

1000 µs

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