VN750PS-E 查看數據表（PDF） - STMicroelectronics

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VN750PS-E

High-side driver

STMicroelectronics 

VN750PS-E

Table 3. Absolute maximum ratings (continued)

Symbol

Parameter

EMAX

Ptot

Tj

Tc

Tstg

Maximum switching energy

(L = 1.8 mH; RL = 0 Ω; Vbat = 13.5 V;

Tjstart = 150 °C; IL = 9 A)

Power dissipation TC = 25 °C

Junction operating temperature

Case operating temperature

Storage temperature

Electrical specifications

Value

Unit

100

mJ

4.2

W

Internally limited

°C

- 40 to 150

°C

- 55 to 150

°C

2.2

Thermal data

Table 4. Thermal data

Symbol

Parameter

Max. value

Unit

Rthj-lead

Rthj-amb

Thermal resistance junction-lead

Thermal resistance junction-ambient

30

93(1)

82(2)

°C/W

°C/W

°C/W

1. When mounted on a standard single-sided FR-4 board with 0.5 cm2 of Cu (at least 35 µm thick) connected

to all VCC pins. Horizontal mounting and no artificial air flow.

2. When mounted on a standard single-sided FR-4 board with 2 cm2 of Cu (at least 35 µm thick) connected to

all VCC pins. Horizontal mounting and no artificial air flow.

Doc ID 16782 Rev 2

7/27

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