BF245A 查看數據表（PDF） - NXP Semiconductors.
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BF245A Datasheet PDF : 13 Pages
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NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B;
BF245C
FEATURES
Interchangeability of drain and source connections
Frequencies up to 700 MHz.
APPLICATIONS
LF, HF and DC amplifiers.
PINNING
PIN
1
2
3
SYMBOL
DESCRIPTION
d
drain
s
source
g
gate
DESCRIPTION
General purpose N-channel symmetrical junction
field-effect transistors in a plastic TO-92 variant package.
1
handbook, halfpage2
3
d
g
s
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
MAM257
Fig.1 Simplified outline (TO-92 variant)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSoff
VGSO
IDSS
Ptot
yfs
PARAMETER
drain-source voltage
gate-source cut-off voltage
gate-source voltage
drain current
BF245A
BF245B
BF245C
total power dissipation
forward transfer admittance
Crs
reverse transfer capacitance
CONDITIONS
ID = 10 nA; VDS = 15 V
open drain
VDS = 15 V; VGS = 0
Tamb = 75 C
VDS = 15 V; VGS = 0;
f = 1 kHz; Tamb = 25 C
VDS = 20 V; VGS = 1 V;
f = 1 MHz; Tamb = 25 C
MIN.
0.25
TYP.
MAX.
30
8
30
UNIT
V
V
V
2
6
12
3
6.5
mA
15
mA
25
mA
300
mW
6.5
mS
1.1
pF
1996 Jul 30
2
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