BF245A 查看數據表（PDF） - NXP Semiconductors.
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BF245A Datasheet PDF : 13 Pages
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NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B; BF245C
30
handbook, halfpage
ID
(mA)
20
10
0
0
MBH554
VGS = 0 V
−1 V
−2 V
−3 V
−4 V
10
VDS (V)
20
VDS = 15 V; Tj = 25 C.
Fig.8 Output characteristics for BF245C;
typical values.
4
handbook, halfpage
ID
(mA)
3
2
1
0
0
50
MGE775
VGS = 0 V
−0.5 V
−1 V
−1.5 V
100 Tj (°C) 150
VDS = 15 V.
Fig.9 Drain current as a function of junction
temperature; typical values for BF245A.
15
handbook, halfpage
ID
(mA)
10
5
0
0
50
MGE776
VGS = 0 V
−1 V
−2 V
100 Tj (°C) 150
20
handboIDok, halfpage
(mA)
16
12
8
4
0
0
50
MGE779
VGS = 0 V
−2 V
−4 V
100 Tj (°C) 150
VDS = 15 V.
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
1996 Jul 30
VDS = 15 V.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
6
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