BT169H(2008) 查看數據表（PDF） - NXP Semiconductors.
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BT169H Datasheet PDF : 11 Pages
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NXP Semiconductors
BT169H
Thyristor, logic level, high voltage
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
BT169H
TO-92
plastic single-ended leaded (through hole) package; 3 leads
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDRM
repetitive peak off-state voltage
-
VRRM
repetitive peak reverse voltage
-
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C;
-
see Figure 1
IT(RMS)
RMS on-state current
all conduction angles; see Figure 4
-
and 5
ITSM
non-repetitive peak on-state current half sine wave; Tj = 25 °C prior to
surge; see Figure 2 and 3
t = 10 ms
-
t = 8.3 ms
-
I2t
I2t for fusing
tp = 10 ms
-
dIT/dt
rate of rise of on-state current
ITM = 2 A; IG = 10 mA;
-
dIG/dt = 100 mA/µs
IGM
peak gate current
-
VRGM
peak reverse gate voltage
-
PGM
peak gate power
-
PG(AV)
average gate power
over any 20 ms period
-
Tstg
storage temperature
−40
Tj
junction temperature
-
Version
SOT54
Max Unit
800
V
800
V
0.5
A
0.8
A
9
A
10
A
0.41
A2s
50
A/µs
1
A
5
V
2
W
0.1
W
+150 °C
125
°C
BT169H_1
Product data sheet
Rev. 01 — 31 March 2008
© NXP B.V. 2008. All rights reserved.
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