BT169H(2008) 查看數據表（PDF） - NXP Semiconductors.
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BT169H Datasheet PDF : 11 Pages
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NXP Semiconductors
BT169H
Thyristor, logic level, high voltage
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD 4= 12 V; IT = 10 mA; see Figure 8
IL
latching current
VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ;
see Figure 10
IH
holding current
VD = 12 V; IG = 0.5 mA; RGK = 1 kΩ;
see Figure 11
VT
on-state voltage
VGT
gate trigger voltage
ID
off-state current
IR
reverse current
Dynamic characteristics
IT = 1.2 A; see Figure 9
IT = 10 mA; see Figure 7
VD = 12 V
VD = VDRM(max); Tj = 125 °C
VD = VDRM(max); Tj = 125 °C; RGK = 1 kΩ
VR = VRRM(max); Tj = 125 °C; RGK = 1 kΩ
dVD/dt
rate of rise of off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; see Figure 12
RGK = 1 kΩ
tgt
gate-controlled turn-on ITM = 2 A; VD = VDRM(max); IG = 10 mA;
time
dIG/dt = 0.1 A/µs
tq
commutated turn-off time VD = 0.67 × VDRM(max); Tj = 125 °C; ITM = 1.6 A;
VR = 35 V; (dIT/dt)M = 30 A/µs; dVD/dt = 2 V/µs;
RGK = 1 kΩ
Min Typ Max Unit
1
50 100 µA
-
2
6
mA
-
1.5 3
mA
-
1.25 1.7 V
-
0.5 0.8 V
0.2 0.3 -
V
-
0.05 0.1 mA
-
0.05 0.1 mA
150 350 -
-
2
-
-
100 -
V/µs
µs
µs
1.6
VGT
VGT(25°C)
1.2
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3
IGT
IGT(25°C)
2
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0.8
1
0.4
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function
of junction temperature
0
−50
0
50
100
150
Tj (°C)
Fig 8. Normalized gate trigger current as a function
of junction temperature
BT169H_1
Product data sheet
Rev. 01 — 31 March 2008
© NXP B.V. 2008. All rights reserved.
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