BT169H(2008) 查看數據表（PDF） - NXP Semiconductors.
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BT169H Datasheet PDF : 11 Pages
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NXP Semiconductors
BT169H
Thyristor, logic level, high voltage
5
IT
(A)
4
001aab454
3
2
1
(1)
(2) (3)
0
0.4
1.2
2
2.8
VT (V)
Vo = 1.067 V
Rs = 0.187 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig 9. On-state current as a function of on-state
voltage
3
IH
IH(25°C)
2
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3
IL
IL(25°C)
2
001aab503
1
0
−50
0
RGK = 1 kΩ
50
100
150
Tj (°C)
Fig 10. Normalized latching current as a function of
junction temperature
104
dVD/dt
(V/µs)
103
001aab507
(1)
1
102
(2)
0
−50
0
RGK = 1 kΩ
50
100
150
Tj (°C)
Fig 11. Normalized holding current as a function of
junction temperature
10
0
50
100
150
Tj (°C)
(1) RGK = 1 kΩ
(2) Gate open circuit
Fig 12. Critical rate of rise of off-state voltage as a
function of junction temperature; typical
values
BT169H_1
Product data sheet
Rev. 01 — 31 March 2008
© NXP B.V. 2008. All rights reserved.
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