PZTA13(1997) 查看數據表（PDF） - Fairchild Semiconductor
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PZTA13 Datasheet PDF : 13 Pages
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MPSA13
MMBTA13
PZTA13
C
BE
TO-92
C
SOT-23
Mark: 1M
E
B
C
SOT-223
E
C
B
NPN Darlington Transistor
This device is designed for applications requiring extremely
high current gain at collector currents to 1.0 A. Sourced from
Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCES
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
30
10
1.2
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
MPSA13
*MMBTA13
PD
Total Device Dissipation
Derate above 25°C
625
350
5.0
2.8
RθJC
Thermal Resistance, Junction to Case
83.3
RθJA
Thermal Resistance, Junction to Ambient
200
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
**PZTA13
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
ã 1997 Fairchild Semiconductor Corporation
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