D16N05 查看數據表（PDF） - Fairchild Semiconductor

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D16N05

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

Fairchild Semiconductor 

Data Sheet

RFD16N05, RFD16N05SM

November 2003

16A, 50V, 0.047 Ohm, N-Channel Power

MOSFETs

The RFD16N05 and RFD16N05SM N-channel power

MOSFETs are manufactured using the MegaFET process.

This process, which uses feature sizes approaching those of

LSI integrated circuits, gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use in applications such as switching regulators,

switching converters, motor drivers, and relay drivers. These

transistors can be operated directly from integrated circuits.

Formerly developmental type TA09771.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD16N05

RFD16N05SM

TO-251AA

TO-252AA

D16N05

D16N05

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.

Packaging

JEDEC TO-251AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

Features

• 16A, 50V

• rDS(ON) = 0.047Ω

• Temperature Compensating PSPICE® Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

D

G

S

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

©2003 Fairchild Semiconductor Corporation

RFD16N05, RFD16N05SM Rev. B1

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