2SC1775A 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SC1775A Datasheet PDF : 7 Pages
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2SC1775, 2SC1775A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SC1775
2SC1775A
Unit
90
120
V
90
120
V
5
5
V
50
50
mA
300
300
mW
150
150
°C
–55 to +150
–50 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1775
Item
Symbol Min Typ
Collector to emitter
breakdown voltage
V(BR)CEO 90
—
Collector cutoff current ICBO
——
——
DC current transfer ratio hFE1*1
hFE2
400 —
160 —
2SC1775A
Max Min Typ
— 120 —
0.5 — —
—— —
1200 400 —
— 160 —
Base to emitter voltage VBE
— — 0.75 — —
Collector to emitter
saturation voltage
VCE(sat)
—
—
0.5 —
—
Gain bandwidth product fT
Collector output
Cob
capacitance
— 200 — — 200
— 1.6 — — 1.6
Noise figure
NF
— — 5.0 — —
— — 1.5 — —
Note: 1. The 2SC1775/A is grouped by hFE1 as follows.
E
F
400 to 800 600 to 1200
Max Unit Test conditions
—V
IC = 1 mA, RBE = ∞
— µA
0.5 µA
1200
—
0.75 V
0.5 V
VCB = 75 V, IE = 0
VCB = 100 V, IE = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V,
IC = 0.1 mA
VCE = 12 V, IC = 2 mA
IC = 10 mA, IB = 1 mA
— MHz VCE = 12 V, IC = 2 mA
— pF VCB = 25 V, IE = 0,
f = 1 MHz
5.0 dB
1.5 dB
VCE = 6 V,
IC = 50 µA,
Rg = 50 kΩ
f = 10
Hz
f=1
kHz
2
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