AD8176ABPZ 查看數據表（PDF） - Analog Devices

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AD8176ABPZ

450 MHz, Triple 16 × 9 Video Crosspoint Switch

Analog Devices 

ABSOLUTE MAXIMUM RATINGS

Table 12.

Parameter

Analog Supply Voltage (VPOS – VNEG)

Digital Supply Voltage (VDD – DGND)

Ground Potential Difference

(VNEG – DGND)

Maximum Potential Difference

(VDD – VNEG)

Common-Mode Analog Input Voltage

Differential Analog Input Voltage

Digital Input Voltage

Output Voltage

(Disabled Analog Output)

Output Short-Circuit Duration

Storage Temperature

Operating Temperature Range

Lead Temperature Range

(Soldering 10 sec)

Junction Temperature

Rating

+6 V

+6 V

+0.5 V to –2.5 V

+8 V

(VNEG – 0.5 V)

to (VPOS + 0.5 V)

±2 V

VDD

(VPOS – 1 V) to (VNEG + 1 V)

Momentary

−65°C to +125°C

−40°C to +85°C

300°C

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 13. Thermal Resistance

Package Type

θJA

PBGA

15

Unit

°C/W

AD8176

POWER DISSIPATION

The AD8176 is operated with ±2.5 V or +5 V supplies and

can drive loads down to 100 Ω, resulting in a large range of

possible power dissipations. For this reason, extra care must

be taken derating the operating conditions based on ambient

temperature.

Packaged in a 676-lead BGA, the AD8176 junction-to-ambient

thermal impedance (θJA) is 15°C/W. For long-term reliability,

the maximum allowed junction temperature of the die should

not exceed 150°C. Temporarily exceeding this limit may cause a

shift in parametric performance due to a change in stresses

exerted on the die by the package. Exceeding a junction tem-

perature of 175°C for an extended period can result in device

failure. Figure 4 shows the range of allowed internal die power

dissipations that meet these conditions over the −40°C to +85°C

ambient temperature range. When using Table 13, do not include

external load power in the Maximum Power calculation, but do

include load current dropped on the die output transistors.

10

TJ = 150°C

9

8

7

6

5

4

3

15

25

35

45

55

65

75

85

AMBIENT TEMPERATURE (°C)

Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature

ESD CAUTION

Rev. 0 | Page 7 of 40

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