AD8117 查看數據表（PDF） - Analog Devices

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AD8117

600 MHz, 32 × 32 Buffered, Analog Crosspoint Switch

Analog Devices 

Data Sheet

ABSOLUTE MAXIMUM RATINGS

Table 6.

Parameter

Analog Supply Voltage (VPOS – VNEG)

Digital Supply Voltage (VDD – DGND)

Ground Potential Difference

(VNEG – DGND)

Maximum Potential Difference

(VDD – VNEG)

Common-Mode Analog Input

Voltage

Differential Analog Input Voltage

Digital Input Voltage

Output Voltage (Disabled Analog

Output)

Output Short-Circuit Duration

Output Short-Circuit Current

Storage Temperature Range

Operating Temperature Range

Lead Temperature (Soldering 10 sec)

Junction Temperature

Rating

6V

6V

+0.5 V to −2.5 V

8V

VNEG to VPOS

±2 V

VDD

(VPOS − 1 V) to (VNEG + 1 V)

Momentary

80 mA

−65°C to +125°C

−40°C to +85°C

300°C

150°C

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

THERMAL RESISTANCE

JA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 7. Thermal Resistance

Package Type

θJA θJC θJB

ψJT

ψJB Unit

304-Ball BGA

14 1 6.5 0.6 5.7 °C/W

AD8117/AD8118

POWER DISSIPATION

The AD8117/AD8118 are operated with ±2.5 V or +5 V

supplies and can drive loads down to 100 Ω, resulting in a large

range of possible power dissipations. For this reason, extra care

must be taken derating the operating conditions based on

ambient temperature.

Packaged in a 304-ball BGA, the AD8117/AD8118 junction-to-

ambient thermal impedance (θJA) is 14°C/W. For long-term

reliability, the maximum allowed junction temperature of the

die must not exceed 150°C. Temporarily exceeding this limit

may cause a shift in parametric performance due to a change in

stresses exerted on the die by the package. Exceeding a junction

temperature of 175°C for an extended period can result in

device failure. The following curve shows the range of allowed

internal die power dissipations that meet these conditions over

the −40°C to +85°C ambient temperature range. When using

the table, do not include external load power in the maximum

power calculation, but do include load current dropped on the

die output transistors.

8

TJ = 150°C

7

6

5

4

15

25

35

45

55

65

75

85

AMBIENT TEMPERATURE (°C)

Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature

ESD CAUTION

Rev. B | Page 7 of 36

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