ADG419-EP 查看數據表（PDF） - Analog Devices
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ADG419-EP Datasheet PDF : 12 Pages
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ADG419-EP
SINGLE SUPPLY
VDD = 12 V ± 10%, VSS = 0 V, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
RON
LEAKAGE CURRENT
Source Off Leakage, IS (Off )
Drain Off Leakage, ID (Off )
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
DYNAMIC CHARACTERISTICS1
tTRANSITION
+25°C
40
±0.1
±0.25
±0.1
±0.75
±0.4
±0.75
170
−40°C to
+85°C
60
±5
±5
±5
2.4
0.8
±0.005
±0.5
250
−55°C to
+125°C
0 to VDD
70
±15
±30
±30
2.4
0.8
±0.005
±0.5
250
Unit
V
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
ns max
Break-Before-Make Time Delay, tD 60
ns typ
Off Isolation
80
dB typ
Channel-to-Channel Crosstalk
70
dB typ
CS (Off )
13
pF typ
CD, CS (On)
65
pF typ
POWER REQUIREMENTS
IDD
0.0001
μA typ
1
2.5
2.5
μA max
IL
0.0001
μA typ
1
2.5
2.5
μA max
1 Guaranteed by design; not subject to production test.
Test Conditions/Comments
VD = 3 V, 8.5 V, IS = −10 mA; see Figure 9
VDD = 10.8 V; see Figure 9
VDD = 13.2 V
VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 10
VD = 12.2 V/1 V, VS = 1 V/12.2 V; see Figure 10
VS = VD = 12.2 V/1 V; see Figure 11
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF; VS1 = 0 V/8 V,
VS2 = 8 V/0 V; see Figure 12
RL = 300 Ω, CL = 35 pF;
VS1 = VS2 = 8 V; see Figure 13
RL = 50 Ω, f = 1 MHz; see Figure 14
RL = 50 Ω, f = 1 MHz; see Figure 15
f = 1 MHz
f = 1 MHz
VDD = 13.2 V
VIN = 0 V or 5 V
VL = 5.5 V
Rev. 0 | Page 4 of 12
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