MMBZ12VALT1G 查看數據表（PDF） - ON Semiconductor
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MMBZ12VALT1G Datasheet PDF : 7 Pages
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MMBZxxxALT1G Series, SZMMBZxxxALT1G Series
TYPICAL CHARACTERISTICS
tr 10 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
100
50% OF IPP.
PEAK VALUE − IPP
IPP
HALF VALUE − 2
50
tP
0
0
1
2
3
4
t, TIME (ms)
Figure 6. Pulse Waveform
100
RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL
10 UNIDIRECTIONAL
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (C)
Figure 7. Pulse Derating Curve
100
RECTANGULAR
WAVEFORM, TA = 25C
BIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 8. Maximum Non−repetitive Surge
Power, Ppk versus PW
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 9. Maximum Non−repetitive Surge
Power, Ppk(NOM) versus PW
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal Zener voltage measured at
the low test current used for voltage classification.
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