STF3NK80Z 查看數據表（PDF） - STMicroelectronics
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STF3NK80Z
STMicroelectronics
STF3NK80Z Datasheet PDF : 18 Pages
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STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
2
Electrical characteristics
Electrical characteristics
(TCASE=25 °C unless otherwise specified)
Table 5.
Symbol
On/off states
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = max rating,
VDS = max rating,
Tc = 125 °C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20 V
Gate threshold voltage
VDS = VGS, ID = 50 µA
Static drain-source on
resistance
VGS = 10 V, ID = 1.25 A
Min. Typ. Max. Unit
800
V
1
µA
50 µA
±10 µA
3 3.75 4.5 V
3.8 4.5 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Ciss
Coss
Crss
Forward transconductance VDS =15 V, ID = 1.25 A
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25 V, f=1 MHz,
VGS=0
-
2.1
-
S
485
pF
-
57
-
pF
11
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS=0, VDS =0 to 640 V
-
22
-
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
VDD=400 V, ID= 1.25 A,
RG= 4.7 Ω, VGS=10 V
(see Figure 19)
17
ns
27
ns
-
-
36
ns
40
ns
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=640 V, ID = 2.5 A
VGS =10 V
19
nC
-
3.2
-
nC
10.8
nC
1. Pulsed: pulse duration=300 µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 9565 Rev 6
5/18
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