2SC2618(2005) 查看數據表（PDF） - Renesas Electronics

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2SC2618
(Rev.:2005)

Silicon NPN Epitaxial

Renesas Electronics 

2SC2618

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

35

Collector to emitter breakdown voltage V(BR)CEO

35

Emitter to base breakdown voltage

V(BR)EBO

4

Collector cutoff current

DC current transfer ratio

ICBO

hFE1*1

—

100

hFE2

10

Collector to emitter saturation voltage

VCE(sat)

—

Base to emitter voltage

VBE

—

Note: 1. The 2SC2618 is grouped by hFE1 as follows.

Grade

C

D

Mark

RC

RD

hFE1

100 to 200 160 to 320

Typ

—

—

—

—

—

—

0.2

0.64

Max

—

—

—

0.5

320

—

0.6

—

Unit

V

V

V

µA

V

V

(Ta = 25°C)

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IC = 0

VCE = 3 V, IC = 10 mA

(Pulse test)

VCE = 3 V, IC = 500 mA

(Pulse test)

IC = 150 mA, IB = 15 mA

(Pulse test)

VCE = 3 V, IC = 10 mA

(Pulse test)

Rev.2.00 Aug 10, 2005 page 2 of 4

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