2SC3686 查看數據表（PDF） - SavantIC Semiconductor
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2SC3686 Datasheet PDF : 4 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3686
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.2A
ICES
Collector cut-off current
VCE=1500V; RBE=0
IEBO
Emitter cut-off current
VEB=4V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Switching times
tstg
Storage time
tf
Fall time
IC=4A; VCC=5V
IB1=0.8A; IB2=-1.6A
MIN TYP. MAX UNIT
800
V
5
V
1.5
V
1
mA
1
mA
8
3
µs
0.1
0.2
µs
2
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