39LF080-55-4C-B3KE 查看數據表（PDF） - Silicon Storage Technology
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39LF080-55-4C-B3KE Datasheet PDF : 25 Pages
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8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
EOL Data Sheet
TABLE 8: DC OPERATING CHARACTERISTICS
VDD = 3.0-3.6V FOR SST39LF080 AND 2.7-3.6V FOR SST39VF0801
Limits
Symbol Parameter
Min
Max
Units Test Conditions
IDD
Power Supply Current
Address input=VILT/VIHT, at f=1/TRC Min
VDD=VDD Max
Read2
20
mA
CE#=VIL, OE#=WE#=VIH, all I/Os open
Program and Erase
30
mA
CE#=WE#=VIL, OE#=VIH
ISB
Standby VDD Current
20
µA
CE#=VIHC, VDD=VDD Max
IALP
Auto Low Power
20
µA
CE#=VILC, VDD=VDD Max
All inputs=VSS or VDD, WE#=VIHC
ILI
Input Leakage Current
1
µA
VIN=GND to VDD, VDD=VDD Max
ILO
Output Leakage Current
10
µA
VOUT=GND to VDD, VDD=VDD Max
VIL
Input Low Voltage
0.8
V
VDD=VDD Min
VILC
Input Low Voltage (CMOS)
0.3
V
VDD=VDD Max
VIH
Input High Voltage
0.7VDD
V
VDD=VDD Max
VIHC
Input High Voltage (CMOS)
VDD-0.3
V
VDD=VDD Max
VOL
Output Low Voltage
0.2
V
IOL=100 µA, VDD=VDD Min
VOH
Output High Voltage
VDD-0.2
V
IOH=-100 µA, VDD=VDD Min
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and VDD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
T8.7 1146
TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1 Power-up to Read Operation
100
µs
TPU-WRITE1 Power-up to Program/Erase Operation
100
µs
T9.1 1146
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter Description
Test Condition
Maximum
CI/O1
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN1
Input Capacitance
VIN = 0V
6 pF
T10.0 1146
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units
Test Method
NEND1,2
TDR1
Endurance
Data Retention
10,000
100
Cycles
Years
JEDEC Standard A117
JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA
JEDEC Standard 78
T11.2 1146
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a
higher minimum specification.
©2007 Silicon Storage Technology, Inc.
10
S71146-07-EOL
6/07
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