39LF080-55-4C-B3K 查看數據表（PDF） - Silicon Storage Technology
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39LF080-55-4C-B3K Datasheet PDF : 25 Pages
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8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
AC CHARACTERISTICS
EOL Data Sheet
TABLE 12: READ CYCLE TIMING PARAMETERS
VDD = 3.0-3.6V FOR SST39LF080 AND 2.7-3.6V FOR SST39VF080
SST39LF080-55
SST39VF080-70
SST39VF080-90
Symbol Parameter
Min
Max
Min
Max
Min
Max Units
TRC
Read Cycle Time
55
70
90
ns
TCE
Chip Enable Access Time
55
70
90
ns
TAA
Address Access Time
55
70
90
ns
TOE
Output Enable Access Time
30
35
45
ns
TCLZ1 CE# Low to Active Output
0
0
0
ns
TOLZ1 OE# Low to Active Output
0
0
0
ns
TCHZ1 CE# High to High-Z Output
15
20
30
ns
TOHZ1 OE# High to High-Z Output
15
20
30
ns
TOH1 Output Hold from Address Change
0
0
0
ns
T12.4 1146
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 13: PROGRAM/ERASE CYCLE TIMING PARAMETERS
Symbol Parameter
Min
Max
Units
TBP
Byte-Program Time
TAS
Address Setup Time
TAH
Address Hold Time
20
µs
0
ns
30
ns
TCS
TCH
TOES
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
0
ns
0
ns
0
ns
TOEH
TCP
TWP
TWPH1
TCPH1
TDS
TDH1
TIDA1
TSE
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
10
ns
40
ns
40
ns
30
ns
30
ns
30
ns
0
ns
150
ns
25
ms
TBE
TSCE
Block-Erase
Chip-Erase
25
ms
100
ms
T13.0 1146
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2007 Silicon Storage Technology, Inc.
11
S71146-07-EOL
6/07
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