39LF080-55-4C-EIE 查看數據表（PDF） - Silicon Storage Technology
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39LF080-55-4C-EIE Datasheet PDF : 25 Pages
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EOL Data Sheet
TABLE 2: PIN DESCRIPTION
Symbol
AMS1-A0
Pin Name
Address Inputs
DQ7-DQ0 Data Input/output
CE#
OE#
WE#
VDD
Chip Enable
Output Enable
Write Enable
Power Supply
VSS
Ground
NC
No Connection
1. AMS = Most significant address
AMS = A19 for SST39LF/VF080
8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
Functions
To provide memory addresses. During Sector-Erase AMS-A12 address lines will select the
sector. During Block-Erase AMS-A16 address lines will select the block.
To output data during Read cycles and receive input data during Write cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers.
To control the Write operations.
To provide power supply voltage: 3.0-3.6V for SST39LF080
2.7-3.6V for SST39VF080
Unconnected pins.
T2.4 1146
TABLE 3: OPERATION MODES SELECTION
Mode
Read
Program
Erase
CE#
VIL
VIL
VIL
OE#
VIL
VIH
VIH
Standby
Write Inhibit
Product Identification
Software Mode
VIH
X
X
VIL
X
X
VIL
VIL
1. X can be VIL or VIH, but no other value.
WE#
VIH
VIL
VIL
DQ
DOUT
DIN
X1
X High Z
X
High Z/ DOUT
VIH High Z/ DOUT
VIH
Address
AIN
AIN
Sector or Block address,
XXH for Chip-Erase
X
X
X
See Table 4
T3.4 1146
©2007 Silicon Storage Technology, Inc.
6
S71146-07-EOL
6/07
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