39LF080-55-4C-B3KE 查看數據表（PDF） - Silicon Storage Technology
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39LF080-55-4C-B3KE Datasheet PDF : 25 Pages
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8 Mbit Multi-Purpose Flash
SST39LF080 / SST39VF080
EOL Data Sheet
TABLE 6: SYSTEM INTERFACE INFORMATION FOR SST39LF/VF080
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
27H1
30H1
36H
00H
00H
04H
00H
04H
06H
01H
00H
01H
01H
Data
VDD Min (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
VDD Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
VPP min (00H = no VPP pin)
VPP max (00H = no VPP pin)
Typical time out for Byte-Program 2N µs (24 = 16 µs)
Typical time out for min size buffer program 2N µs (00H = not supported)
Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)
Typical time out for Chip-Erase 2N ms (26 = 64 ms)
Maximum time out for Byte-Program 2N times typical (21 x 24 = 32 µs)
Maximum time out for buffer program 2N times typical
Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)
Maximum time out for Chip-Erase 2N times typical (21 x 26 = 128 ms)
1. 0030H for SST39LF080 and 0027H for SST39VF080
T6.2 1146
TABLE 7: DEVICE GEOMETRY INFORMATION FOR SST39LF/VF080
Address
27H
28H
29H
2AH
2BH
2CH
2DH
2EH
2FH
30H
31H
32H
33H
34H
Data
14H
00H
00H
00H
00H
02H
FFH
00H
10H
00H
0FH
00H
00H
01H
Data
Device size = 2N Bytes (14H = 20; 220 = 1 MByte)
Flash Device Interface description; 0000H = x8-only asynchronous interface
Maximum number of bytes in multi-byte write = 2N (00H = not supported)
Number of Erase Sector/Block sizes supported by device
Sector Information (y + 1 = Number of sectors; z x 256B = sector size)
y = 255 + 1 = 256 sectors (00FFH = 255)
z = 16 x 256 Bytes = 4 KByte/sector (0010H = 16)
Block Information (y + 1 = Number of blocks; z x 256B = block size)
y = 15 + 1 = 16 blocks (000FH = 15)
z = 256 x 256 Bytes = 64 KByte/block (0100H = 256)
T7.0 1146
©2007 Silicon Storage Technology, Inc.
8
S71146-07-EOL
6/07
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