UF830G-TF3-T 查看數據表（PDF） - Unisonic Technologies
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UF830G-TF3-T Datasheet PDF : 8 Pages
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UF830
TYPICAL CHARACTERISTICS
Normalized Power Dissipation vs. Case
Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
Case Temperature, TC (°C)
Normalized Maximum Transient Thermal
Impedance
1
0.5
0.2
0.1
0.1 0.05
0.02
PDM
t1
0.01
t2
0.01
10-5
Single pulse *Notes:
Duty Factor, D=t1/t2
Peak TJ =PDM×ZθJC×RθJC +TC
10-4
10-3
10-2
10-1
1
10
Rectangular Pulse Duration, t1 (s)
Output Characteristics
6
VGS=5.5V
5
VGS=10V
4
VGS=5.0V
Pulse Duration=80μs
3
Duty Cycle = 0.5% Max
2
VGS=4.5V
1
VGS=4.0V
0
0
50
100 150 200
250 300
Drain to Source Voltage, VDS (V)
Power MOSFET
Maximum Contionuous Drain Current vs. Case
5
Temperature
4
3
2
1
0
25
100
50
75
100
125
150
Case Temperature,TC (°C)
Forward Bias Safe Operating Area
Operation in This Region
is Limited by rDS (on)
10
1
1001m0ms11ms0s100μμss
DC
TC=25°C
TJ=Max Rated
0.1 Single Pulse
1
10
102
103
Drain to Source Voltage, VDS (V)
Saturation Characteristics
5
Pulse Duration=80μs
VGS=10V
Duty Cycle = 0.5% Max
4
VGS=5.5V
VGS=5.0V
3
2
VGS=4.5V
1
0
0
2
4
6
VGS=4.0V
8
10
Drain to Source Voltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 8
QW-R502-046,G
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