K07N120(2008) 查看數據表（PDF） - Infineon Technologies

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K07N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW07N120

5mJ

*) Eon and Ets include losses

due to diode recovery.

4mJ

3mJ

2mJ

Ets*

Eon*

Eoff

1mJ

0mJ

0A

5A

10A 15A 20A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 4 7 Ω,

dynamic test circuit in Fig.E )

2.0mJ

*) Eon and Ets include losses

due to diode recovery.

Ets*

1.5mJ

Eon*

1.0mJ

Eoff

0.5mJ

0.0mJ

-50°C 0°C 50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses

as a function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 8A, RG = 4 7 Ω,

dynamic test circuit in Fig.E )

2.5mJ

*) Eon and Ets include losses

due to diode recovery.

E*

ts

2.0mJ

1.5mJ

1.0mJ

Eon*

Eoff

0.5mJ

0.0mJ

0Ω 20Ω 40Ω 60Ω 80Ω 100Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 8A,

dynamic test circuit in Fig.E )

100K/W

D=0.5

0.2

0.1

10-1K/W

0.05

0.02

0.01

10-2K/W

R,(K/W)

0.1020

0.40493

0.26391

0.22904

R1

τ, (s)

0.77957

0.21098

0.01247

0.00092

R2

single pulse C1=τ1/R1 C2=τ2/R2

10-3K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width

(D = tp / T)

Power Semiconductors

7

Rev. 2_2 Sep 08

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