D789 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

D789

Silicon NPN Epitaxial

Renesas Electronics 

2SD789

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

100

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

50

—

—

V IC = 1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

6

—

—

V IE = 10 µA, IC = 0

Collector cutoff current

ICBO

—

—

1

µA VCB = 80 V, IE = 0

Emitter cutoff current

DC current transfer ratio

IEBO

—

—

0.2

µA VEB = 6 V, IC = 0

hFE*1

160

—

800

VCE = 2 V, IC = 0.1A

Collector to emitter saturation voltage

VCE(sat)

—

—

0.3

V IC = 1 A, IB = 0.1 A

Gain bandwidth product

fT

—

100

—

MHz VCE = 2 V, IC = 10 mA

Collector output capacitance

Cob

—

20

—

pF VCB = 10 V, IE = 0, f = 1MHz

Note: 1. The 2SD789 is grouped by hFE as follows.

C

D

E

160 to 320 250 to 500 400 to 800

Rev.3.00 Aug 10, 2005 page 2 of 5

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