BUH515D 查看數據表（PDF） - SavantIC Semiconductor
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BUH515D Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH515D
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1.25A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1.25A
ICES-1
Collector cut-off current
ICES-2
Collector cut-off current
IEBO
Emitter cut-off current
VCE=1300V; VBE=0
VCE=1500V; VBE=0
Tj=125
VEB=5V; IC=0
hFE
DC current gain
IC=5A ; VCE=5V
VF
Diode forward voltage
IF=5A
Switching times
ts
Storage time
tf
Fall time
IC=5A;IB1=1.5A;-IB2=2.5A;
VCC=400V
MIN TYP. MAX UNIT
1.5
V
1.3
V
10
µA
0.2
2
mA
200 mA
5
10
2
V
2.4
3.6
µs
170 260
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
2.5
UNIT
/W
2
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