K2788 查看數據表（PDF） - Renesas Electronics

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K2788

Silicon N Channel MOS FET High Speed Power Switching

Renesas Electronics 

2SK2788

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Drain current

Drain peak current

ID

ID(pulse)*1

Body to drain diode reverse drain current

Channel dissipation

IDR

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. When using the alumina ceramic board (12.5 x 20 x 0.7 mm)

Ratings

60

±20

2

4

2

1

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 60

Gate to source breakdown voltage V(BR)GSS ±20

Zero gate voltage drain current

IDSS

—

Gate to source leak current

IGSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

resistance

RDS(on)

—

RDS(on)

—

Forward transfer admittance

|yfs|

1.6

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body to drain diode forward voltage VDF

—

Body to drain diode reverse

recovery time

trr

—

Notes: 3. Pulse test

Typ

—

—

—

—

—

0.12

0.16

2.8

180

90

30

9

15

40

35

0.9

35

Max

—

—

10

±10

2.0

0.16

0.25

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VDS = 60 V, VGS = 0

VGS = ±16 V, VDS = 0

ID = 1 mA, VDS = 10 V

ID = 1 A, VGS = 10 V*3

ID = 1 A, VGS = 4 V*3

ID = 1 A, VDS = 10 V*3

VDS = 10 V, VGS = 0,

f = 1 MHz

VGS = 10 V, ID = 1 A,

RL = 30 Ω

ID = 2 A, VGS = 0

IF = 2 A, VGS = 0

diF/ dt = 50A/µs

Rev.2.00 Sep. 07, 2005 page 2 of 6

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