A836 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

A836

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA836

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Emitter current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

IE

PC

Tj

Tstg

Ratings

Unit

–55

V

–55

V

–5

V

–100

mA

100

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Collector to base breakdown V(BR)CBO –55

voltage

Collector to emitter breakdown V(BR)CEO –55

voltage

Emitter to base breakdown

voltage

V(BR)EBO

–5

Collector cutoff current

I CBO

—

Emitter cutoff current

I EBO

—

DC current transfer ratio

hFE*1

160

Collector to emitter saturation VCE(sat)

—

voltage

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance Cob

—

Noise figuer

NF

—

—

Typ Max Unit

—

—

V

—

—

V

—

—

V

—

–100 nA

—

–50 nA

—

500

–0.1 –0.5 V

–0.66

200

2.0

1

0.5

–0.75

—

—

5

1

V

MHz

pF

dB

dB

Note: 1. The 2SA836 is grouped by hFE as follows.

C

D

160 to 320 250 to 500

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –18 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

VCE = –12 V, IE = –2 mA

VCB = –10 V, IE = 0, f = 1MHz

VCE = –6 V,

f = 10 Hz

IC = –0.1mA,

Rg = 10 kΩ

f = 1 kHz

2

Share Link: