A836 查看數據表（PDF） - Renesas Electronics

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产品描述 (功能)

生产厂家

A836

2SA836 Silicon PNP Epitaxial

Renesas Electronics 

2SA836

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage V(BR)CBO –55

Collector to emitter breakdown

voltage

V(BR)CEO

–55

Emitter to base breakdown voltage V(BR)EBO –5

Collector cutoff current

ICBO

—

Emitter cutoff current

DC current transfer ratio

IEBO

—

hFE*1

160

Collector to emitter saturation voltage VCE(sat)

—

Base to emitter voltage

VBE

—

Gain bandwidth product

fT

—

Collector output capacitance

Cob

—

Noise figure

NF

—

—

Note: 1. The 2SA836 is grouped by hFE as follows.

C

D

160 to 320 250 to 500

Typ Max

—

—

—

—

—

—

—

—

–0.1

–0.66

200

2.0

1

0.5

—

–100

–50

500

–0.5

–0.75

—

—

5

1

(Ta = 25°C)

Unit

Test conditions

V IC = –10 µA, IE = 0

V IC = –1 mA, RBE = ∞

V

nA

nA

V

V

MHz

pF

dB

dB

IE = –10 µA, IC = 0

VCB = –18 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

VCE = –12 V, IE = –2 mA

VCB = –10 V, IE = 0, f = 1MHz

VCE = –6 V, f = 10 Hz

IC = –0.1mA, f = 1 kHz

Rg = 10 kΩ

Rev.2.00 Aug 10, 2005 page 2 of 5

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