A836 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

A836

2SA836 Silicon PNP Epitaxial

Renesas Electronics 

2SA836

Main Characteristics

Maximum Collector Dissipation Curve

300

200

100

0

50

100

150

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

–100 m

–50 m VCE = –12 V

–20 m

–10 m

–5 m

–2 m

–1 m

–500 µ

–200 µ

–100 µ

–50 µ

–20 µ

–10 µ

0 –0.2 –0.4 –0.6 –0.8 –1.0

Base to Emitter Voltage VBE (V)

Collector Output Capacitance vs.

Collector to Base Voltage

50

f = 1 MHz

IE = 0

20

10

5

2

1

–1 –2

–5 –10 –20 –50

Collector to Base Voltage VCB (V)

Rev.2.00 Aug 10, 2005 page 3 of 5

Typical Output Characteristics

–10

–30

–8

–25

–20

–6

–15

–4

–10

–5 µA

–2

IB = 0

0

–2 –4 –6 –8 –10

Collector to Emitter Voltage VCE (V)

10,000

DC Current Transfer Ratio vs.

Collector Current

VCE = –12 V

1,000

100

10

–10 µ

–100 µ

–1 m

–10 m –50 m

Collector Current IC (A)

Contours of Constant Noise Figure (1)

100 k

50 k

20 k f = 10 Hz

10 k

5k

2k

1k

500

200

–0.01–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2 –5 –10

Collector Current IC (mA)

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