CLF1G0035-100 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

CLF1G0035-100

Broadband RF power GaN HEMT

NXP Semiconductors. 

NXP Semiconductors

CLF1G0035-100; CLF1G0035S-100

Broadband RF power GaN HEMT

7.3.3 2-Tone CW performance



,0'

G%F



DDD



,0'

G%F



DDD





































3/3(3 :

VDS = 50 V; IDq = 300 mA; f = 1 MHz.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

Fig 7.

Third-order intermodulation distortion as a

function of peak envelope power load power;

typical values









3/3(3 :

VDS = 50 V; IDq = 500 mA; f = 1 MHz.

(1) f = 300 MHz

(2) f = 1000 MHz

(3) f = 2000 MHz

Fig 8.

Third-order intermodulation distortion as a

function of peak envelope power load power;

typical values

CLF1G0035-100_1G0035S-100

Objective data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 29 January 2013

© NXP B.V. 2013. All rights reserved.

10 of 20

Share Link: