CLF1G0035-100 查看數據表（PDF） - NXP Semiconductors.
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CLF1G0035-100 Datasheet PDF : 20 Pages
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CLF1G0035-100;
CLF1G0035S-100
Broadband RF power GaN HEMT
Rev. 2 — 29 January 2013
Objective data sheet
1. Product profile
1.1 General description
CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W
amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation
is from DC to 3.5 GHz.
Table 1. CW and pulsed RF application information
Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal
f
(MHz)
PL
Gp
D
(W)
(dB)
(%)
1-Tone CW
500
100
14.2
61.6
1000
100
11.2
47.9
1500
100
10.8
46.4
2000
100
11.7
53.3
1-Tone pulsed [1]
500
100
15.5
67.4
1000
100
14
52.9
1500
100
14.3
53.7
2000
100
13.9
59.5
[1] Pulsed RF; tp = 50 s; = 1 %.
Table 2. 2-Tone CW application information
Typical 2-Tone performance at Tcase = 25 C; IDq = 500 mA; VDS = 50 V in a class-AB broadband
demo board.
Test signal
f
PL(PEP)
IMD3
(MHz)
(W)
(dBc)
2-Tone CW [1]
300
20
45.5
1000
20
39.3
1500
20
44
2000
20
46.4
[1] 2-Tone CW; f = 1 MHz.
1.2 Features and benefits
Frequency of operation is from DC to 3.5 GHz
100 W general purpose broadband RF Power GaN HEMT
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