CLF1G0035-100 查看數據表（PDF） - NXP Semiconductors.

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CLF1G0035-100

Broadband RF power GaN HEMT

NXP Semiconductors. 

NXP Semiconductors

CLF1G0035-100; CLF1G0035S-100

Broadband RF power GaN HEMT

7. Application information

7.1 Demo circuit

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5)&& ,1387 5(9 

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5)&& 287387 5(9 

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5

5

5

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4

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4

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3

3

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3

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4

5

7

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Fig 1. The broadband amplifier (200 MHz to 2100 MHz) demo circuit outline

DDD

Table 9. List of components

See Figure 1 and Figure 2.

Component

Description

A1

GaN bias module v2

C1

multilayer ceramic chip capacitor

C3

multilayer ceramic chip capacitor

C4

multilayer ceramic chip capacitor

C5, C6

multilayer ceramic chip capacitor

C7

multilayer ceramic chip capacitor

C9

multilayer ceramic chip capacitor

C10

multilayer ceramic chip capacitor

C11

multilayer ceramic chip capacitor

C12

multilayer ceramic chip capacitor

C13

multilayer ceramic chip capacitor

C20

multilayer ceramic chip capacitor

C21

multilayer ceramic chip capacitor

Value

-

3.3 pF

1.5 pF

100 pF

1.8 pF

39 pF

10 nF

10 nF

22 pF

1 nF

100 nF

1 nF

100 pF

CLF1G0035-100_1G0035S-100

Objective data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 29 January 2013

Remarks

NXP

ATC 600F, PassivePlus 0805N

ATC 600F, PassivePlus 0805N

ATC 600F, PassivePlus 0805N

ATC 800B, PassivePlus 1111N

ATC 800B, PassivePlus 1111N

ATC 600F, PassivePlus 0805N

generic

generic

generic

generic

ATC 700B

ATC 700B

© NXP B.V. 2013. All rights reserved.

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