NXP Semiconductors
CLF1G0035-100; CLF1G0035S-100
Broadband RF power GaN HEMT
7.3 Graphical data
The following figures are measured in a broadband amplifier demo board circuit from
200 MHz to 2100 MHz.
7.3.1 1-Tone CW RF performance
*S
G%
DDD
Ș'
*S
G%
*S
Ș'
*S
DDD
Ș'
Ș'
I 0+]
3/ G%P
VDS = 50 V; IDq = 300 mA; PL = 100 W.
Fig 3. Power gain and drain efficiency as function of
frequency; typical values
VDS = 50 V; IDq = 300 mA.
(1) f = 300 MHz
(2) f = 1000 MHz
(3) f = 2000 MHz
Fig 4. Power gain and drain efficiency as function
output power; typical values
CLF1G0035-100_1G0035S-100
Objective data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 29 January 2013
© NXP B.V. 2013. All rights reserved.
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