2SK1157 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SK1157 Datasheet PDF : 9 Pages
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Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID = 2 A
0
4
8
12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
2.0
VGS = 10 V
Pulse Test
1.6
ID = 10 A
1.2
0.8
2, 5 A
0.4
0
–40 0
40 80 120 160
Case Temperature TC (°C)
2SK1157, 2SK1158
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1.0
0.5
15 V
0.2
0.1
0.05
0.5 1.0 2
5 10 20
50
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 20 V
Pulse Test
20
–25°C
TC = 25°C
10
75°C
5
2
1.0
0.5
0.1 0.2
0.5 1.0 2
5 10
Drain Current ID (A)
5
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