2SC1815(2011) 查看數據表（PDF） - Unisonic Technologies

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2SC1815
(Rev.:2011)

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

Unisonic Technologies 

2SC1815

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (Ta=25℃,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-emitter voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Base Current

IB

50

mA

Power Dissipation(Ta=25℃)

PD

400

mW

Junction Temperature

TJ

+125

℃

Storage Temperature

TSTG

-55 ~ +125

℃

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector Cut-off Current

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

DC Current Gain

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

SYMBOL

TEST CONDITIONS

ICBO VCB=60V, IE=0

IEBO VEB=5V, IC=0

VCE(SAT) IC=100mA, IB=10mA

VBE(SAT) IC=100mA, IB=10mA

hFE1 VCE=6V, IC=2mA

hFE2 VCE=6V, IC=150mA

fT VCE=10V, IC=50mA

Cob VCB=10V, IE=0, f=1MHz

NF

IC=-0.1mA, VCE=6V

RG=10kΩ, f=100Hz

„ CLASSIFICATION OF hFE1

RANK

RANGE

Y

120-240

GR

200-400

MIN TYP MAX UNIT

100 nA

100 nA

0.1 0.25

V

1.0

V

120

700

25

80

MHz

2.0

3.0

pF

1.0

10

dB

BL

350-700

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R201-006,F

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