2SC1815 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
2SC1815 Datasheet PDF : 4 Pages
| |||
2SC1815
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
50
mA
Power Dissipation (TA=25°C)
PD
625
mW
Junction Temperature
TJ
+125
°C
Storage Temperature
TSTG
-55 ~ +125
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Case
SYMBOL
θJC
RATINGS
80
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Cut-off Current
ICBO VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Saturation Voltage VCE(SAT) IC=100mA, IB=10mA
Base-Emitter Saturation Voltage
VBE(SAT) IC=100mA, IB=10mA
DC Current Gain
hFE1 VCE=6V, IC=2mA
70
hFE2 VCE=6V, IC=150mA
25
Current Gain Bandwidth Product
fT
VCE=10V, IC=50mA
80
Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE1
RANK
RANGE
O
70~140
Y
120~240
GR
200~400
TYP MAX UNIT
100
nA
100
nA
0.1 0.25
V
1.0
V
700
MHz
2.0
3.0
pF
BL
350~700
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-006.N
Share Link: 