SI4800BDY 查看數據表（PDF） - Vishay Semiconductors
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SI4800BDY Datasheet PDF : 8 Pages
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Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
50
0.05
TJ = 150 °C
10
0.04
ID = 9 A
0.03
0.02
TJ = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
ID = 250 µA
0.0
- 0.2
- 0.4
- 0.6
0.01
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
150
120
90
60
30
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited
by RDS(on)*
0
10-3
10-2
10-1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
0.1
TC = 25 °C
Single Pulse
10 ms
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
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