SI4800
N-channel TrenchMOS™ logic level FET
M3D315
Rev. 02 — 17 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Low gate charge
s Low on-state resistance
s Surface mounted package
s Fast switching.
1.3 Applications
s Portable appliances
s Lithium-ion battery chargers
s Notebook computers
s DC-to-DC converters.
1.4 Quick reference data
s VDS ≤ 30 V
s Ptot ≤ 2.5 W
s ID ≤ 9 A
s RDSon ≤ 18.5 mΩ
2. Pinning information
Table 1:
Pin
1,2,3
4
5,6,7,8
Pinning - SOT96-1 (SO-8), simplified outline and symbol
Description
Simplified outline
source (s)
gate (g)
8
5
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s